Source of separated gas-metal plasma

Direct flow plasma source - evaporator





Source of high energy metal ions - implanter.

Source of high energy metal ions – Implanter is designed for the process of ion implantation doping metal surfaces in order to change the physical and chemical properties (high hardness, wear resistance, corrosion resistance, etc.) and complex processes like coating with simultaneous bombarding with high-energy ions (doping and ion mixing). Implanter is developed by us in collaboration with the National Engineering Centre (RITC, Tomsk), based on Diana implanters, the development of the Institute of High Current Electronics SB RAS, Tomsk.

High voltage (100 kV), which accelerates the ions is formed inside the source using pulse transformers. Source supply is carried out with a voltage of 300 V. The source does not have any “external” high voltage, high voltage source, high voltage cables and inputs. The source is much more reliable, safer and more convenient to use than implanters in which high voltage is formed in a separate source and supplied to implanter using high-voltage cables.

Below is the implanter with removed anode unit.



The technology of ion implantation allows introducing a specified quantity of practically any chemical element to a predetermined depth and, thus, doping one substance with another in the desired proportions. The introduction of implantable element in the host lattice of material is possible without observing the laws of thermodynamics that determine equilibrium processes such as diffusion and solubility. This process is much more accurate than the diffusion method of doping.

Complex processes coating with simultaneous ion implantation (high-energy ions bombardment) allow to:

  • get high coating adhesion to the substrate due to ion mixing of the substrate material and coating material, especially when these materials do not mix in nature;
  • change the composition of coating by doping the implanter’s cathode with material;
  • change the dislocation structure by bombarding with high-energy ions.

However, despite the unique opportunities, at present, ion implantation and complex processes are not widely used for surface modification to improve the performance of the tool, machine parts, etc. (as opposed to applications in microelectronics, creation of semiconductor devices, where ion implantation is widely used). In these areas of application, ion implantation and complex processes do not provide significant advantages in comparison with modern vacuum ion-plasma electric arc methods of making materials and coatings. Equipment for making materials and coatings by vacuum ion-plasma electrical arc methods is much more reliable, easy and convenient to use than high-energy implantation equipment for metal ions. The use of ion implantation and complex processes in these areas is limited to several specific tasks.